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| Data Sheet 500mA LOW NOISE LDO REGULATOR General Description The AP2213 is a 500mA output current fixed voltage regulator which provides low noise, very low dropout voltage (typically 350mV at 500mA), very low standby current (1A maximum) and excellent power supply ripple rejection (PSRR 75dB at 100Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. The AP2213 features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The AP2213 has 2.5V, 3.0V and 3.3V versions. The AP2213 is available in TO-252-2 (1), SOIC-8 and SOT-223 packages. AP2213 Features * * * * * * * * * * * Up to 500mA Output Current Low Standby Current Low Dropout Voltage: VDROP=350mV at 500mA High Output Accuracy: 1% Good Ripple Rejection Ability: 75dB at 100Hz and IOUT=100A Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reversed-battery Protection Logic-controlled Enable Applications * * * * Laptop, Notebook, and Palmtop Computer CD-ROM, CD-R/RW, DVD Driver Portable Electronic PC Peripheral TO-252-2 (1) SOIC-8 SOT-223 Figure 1. Package Types of AP2213 Nov. 2009 Rev. 1. 5 1 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Pin Configuration D Package (TO-252-2 (1)) M Package (SOIC-8) AP2213 3 2 1 VOUT GND VIN EN VIN VOUT BYP 1 2 3 4 8 7 6 5 GND GND GND GND H Package (SOT-223) 3 2 1 VIN VOUT GND Figure 2. Pin Configuration of AP2213 (Top View) Pin Descrition Pin Number TO-252-2 (1) 3 2 1 SOIC-8 3 5, 6, 7, 8 2 1 4 SOT-223 2 1 3 Pin Name VOUT GND VIN EN BYP Function Regulated output voltage Ground Input Voltage Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown Bypass capacitor for low noise operation Nov. 2009 Rev. 1. 5 2 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Functional Block Diagram AP2213 VIN 1 (2) (3) 3 (3) (2) VOUT (4) BYP + (1) - Bandgap Ref. EN Current Limit Thermal Shutdown 2 (5, 6, 7, 8) (1) A (B) (C) A for TO-252-2 (1) B for SOIC-8 C for SOT-223 GND Figure 3. Functional Block Diagram of AP2213 Nov. 2009 Rev. 1. 5 3 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Ordering Information AP2213 Circuit Type E1: Lead Free G1: Green AP2213 TR: Tape and Reel Package D: TO-252-2 (1) M: SOIC-8 H: SOT-223 Blank: Tube 2.5: Fixed Output 2.5V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V Package Temperature Range Part Number Lead Free AP2213D-2.5E1 AP2213D-2.5TRE1 AP2213D-3.0E1 AP2213D-3.0TRE1 AP2213D-3.3E1 AP2213D-3.3TRE1 AP2213M-2.5E1 AP2213M-2.5TRE1 AP2213M-3.0E1 AP2213M-3.0TRE1 AP2213M-3.3E1 AP2213M-3.3TRE1 AP2213H-2.5TRE1 Marking ID Green Lead Free AP2213D-2.5E1 AP2213D-2.5E1 AP2213D-3.0E1 AP2213D-3.0E1 AP2213D-3.3E1 AP2213D-3.3E1 2213M-2.5E1 2213M-2.5E1 2213M-3.0E1 2213M-3.0E1 2213M-3.3E1 2213M-3.3E1 EH13C EH13E EH13F Green AP2213D-2.5G1 AP2213D-2.5G1 AP2213D-3.0G1 AP2213D-3.0G1 AP2213D-3.3G1 AP2213D-3.3G1 2213M-2.5G1 2213M-2.5G1 2213M-3.0G1 2213M-3.0G1 2213M-3.3G1 2213M-3.3G1 GH13C GH13E GH13F Packing Type Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tube Tape & Reel Tape & Reel Tape & Reel Tape & Reel AP2213D-2.5G1 AP2213D-2.5TRG1 AP2213D-3.0G1 AP2213D-3.0TRG1 AP2213D-3.3G1 AP2213D-3.3TRG1 AP2213M-2.5G1 AP2213M-2.5TRG1 AP2213M-3.0G1 AP2213M-3.0TRG1 AP2213M-3.3G1 AP2213M-3.3TRG1 AP2213H-2.5TRG1 AP2213H-3.0TRG1 AP2213H-3.3TRG1 TO-252-2 (1) -40 to 125oC SOIC-8 -40 to 125oC SOT-223 -40 to 125 C o AP2213H-3.0TRE1 AP2213H-3.3TRE1 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Nov. 2009 Rev. 1. 5 4 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Absolute Maximum Ratings (Note 1) Parameter Supply Input Voltage Enable Input Voltage Power Dissipation Lead Temperature (Soldering, 10sec) Junction Temperature Storage Temperature ESD (Machine Model) Thermal Resistance (No Heatsink) Symbol VIN VEN PD TLEAD TJ TSTG ESD TO-252-2 (1) JA SOIC-8 SOT-223 Value 20 20 Internally Limited (Thermal Protection) 260 150 -65 to 150 300 90 160 108 o AP2213 Unit V V W o C oC oC V C/W Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Input Voltage Enable Input Voltage Operating Junction Temperature Symbol VIN VEN TJ Min 2.5 0 -40 Max 18 18 125 Unit V V oC Nov. 2009 Rev. 1. 5 5 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/T (VOUT/VOUT)/T VRLINE VRLOAD VIN=3.5V to 13.2V IOUT=0.1mA to 500mA IOUT=100A IOUT=50mA IOUT=100mA Dropout Voltage (Note 5) VDROP IOUT=150mA IOUT=300mA IOUT=500mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA VEN2.0V, IOUT=500mA 100 350 1.3 4 11 Conditions Variation from specified VOUT Min -1 -2 120 48 1.5 1 15 110 140 165 250 350 0.01 4.5 12 7 17 50 70 150 230 250 300 275 350 400 500 600 700 1 5 150 180 600 800 1.9 2.5 10 15 20 28 mA A A mV mV mV Typ Max 1 2 Unit % V/oC ppm/oC AP2213 Nov. 2009 Rev. 1. 5 6 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2213-2.5 Electrical Characteristics VIN=3.5V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Ripple Rejection Current Limit Output Noise Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Enable Input Logic-high Current Symbol PSRR ILIMIT eno VIL VIH IIL IIH VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V TO-252-2 (1) Thermal Resistance JC SOIC-8 SOT-223 20 45 31 o AP2213 Conditions f=100Hz, IOUT=100A Min Typ 75 700 260 Max 1000 Unit dB mA nV / Hz 0.4 0.18 2.0 0.01 5 1 2 20 25 V V A A C/W Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the Nov. 2009 Rev. 1. 5 7 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/T (VOUT/VOUT)/T VRLINE VRLOAD VIN=4V to 13.2V IOUT=0.1mA to 500mA IOUT=100A IOUT=50mA IOUT=100mA Dropout Voltage (Note 5) VDROP IOUT=150mA IOUT=300mA IOUT=500mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA VEN2.0V, IOUT=500mA 100 350 1.3 4 11 Conditions Variation from specified VOUT Min -1 -2 120 40 1.5 1 15 110 140 165 250 350 0.01 4.5 12 8 17 50 70 150 230 250 300 275 350 400 500 600 700 1 5 150 180 600 800 1.9 2.5 10 15 20 28 mA A A mV mV mV Typ Max 1 2 Unit % V/oC ppm/oC AP2213 Nov. 2009 Rev. 1. 5 8 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2213-3.0 Electrical Characteristics VIN=4V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Ripple Rejection Current Limit Output Noise Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Enable Input Logic-high Current Symbol PSRR ILIMIT eno VIL VIH IIL IIH VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V TO-252-2 (1) Thermal Resistance JC SOIC-8 SOT-223 20 45 31 o AP2213 Conditions f=100Hz, IOUT=100A Min Typ 75 700 260 Max 1000 Unit dB mA nV / Hz 0.4 0.18 2.0 0.01 5 1 2 20 25 V V A A C/W Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Nov. 2009 Rev. 1. 5 9 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Output Voltage Accuracy Output Voltage Temperature Coefficient (Note 3) Line Regulation Load Regulation (Note 4) Symbol VOUT/VOUT VOUT/T (VOUT/VOUT)/T VRLINE VRLOAD VIN=4.3V to 13.2V IOUT=0.1mA to 500mA IOUT=100A IOUT=50mA IOUT=100mA Dropout Voltage (Note 5) VDROP IOUT=150mA IOUT=300mA IOUT=500mA Standby Current ISTD VEN0.4V (shutdown) VEN0.18V (shutdown) VEN2.0V, IOUT=100A VEN2.0V, IOUT=50mA Ground Pin Current (Note 6) IGND VEN2.0V, IOUT=150mA VEN2.0V, IOUT=300mA VEN2.0V, IOUT=500mA 100 350 1.3 4 11 Conditions Variation from specified VOUT Min -1 -2 120 36.3 1.5 1 15 110 140 165 250 350 0.01 4.5 12 9 18 50 70 150 230 250 300 275 350 400 500 600 700 1 5 150 180 600 800 1.9 2.5 10 15 20 28 mA A A mV mV mV Typ Max 1 2 Unit % V/oC ppm/oC AP2213 Nov. 2009 Rev. 1. 5 10 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Electrical Characteristics (Continued) AP2213-3.3 Electrical Characteristics VIN=4.3V, IOUT=100A, CIN=1.0F, COUT=2.2F, VEN2.0V, TJ=25oC, Bold typeface applies over -40oCTJ125oC (Note 2), unless otherwise specified. Parameter Ripple Rejection Current Limit Output Noise Enable Input Logic-low Voltage Enable Input Logic-high Voltage Enable Input Logic-low Current Enable Input Logic-high Current Symbol PSRR ILIMIT eno VIL VIH IIL IIH VOUT=0V IOUT=50mA, COUT=2.2F, 100pF from BYP to GND Regulator shutdown Regulator enabled VIL0.4V VIL0.18V VIL2.0V VIL2.0V TO-252-2 (1) Thermal Resistance JC SOIC-8 SOT-223 20 45 31 o AP2213 Conditions f=100Hz, IOUT=100A Min Typ 75 700 260 Max 1000 Unit dB mA nV / Hz 0.4 0.18 2.0 0.01 5 1 2 20 25 V V A A C/W Note 2: Specifications in bold type are limited to -40oCTJ125oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (40oCTJ125oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. Nov. 2009 Rev. 1. 5 11 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Performance Characteristics AP2213 2.502 2.500 2.498 850 800 AP2213-2.5 VIN=3.5V, IOUT=10mA Dropout Voltage (mV) 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 -60 IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA CIN=1F, COUT=2.2F CIN=1F, COUT=2.2F Output Voltage (V) 2.496 2.494 2.492 2.490 2.488 2.486 2.484 -60 -40 -20 0 20 40 60 o 80 100 120 140 -40 -20 0 20 40 60 o 80 100 120 140 Junction Temperature ( C) Junction Temperature ( C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 10 9 20 TA=25 C Ground Pin Current (mA) o 18 16 14 12 10 8 6 4 2 0 -60 AP2213-2.5 VIN=3.5V, CIN=1F, COUT=2.2F IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA Ground Pin Current (mA) 8 7 6 5 4 3 2 1 0 0 CIN=1F, COUT=2.2F 100 200 300 400 500 -40 -20 0 20 40 60 0 80 100 120 140 Output Current (mA) Junction Temperature ( C) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature Nov. 2009 Rev. 1. 5 12 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2213 13 12 11 10 1.8 AP2213-2.5, VIN=3.5V CIN=1F, COUT=2.2F, IOUT=100A VEN=1.8V 1.7 1.6 1.5 AP2213-2.5 CIN=1F, COUT=2.2F IOUT=100A, VIN=3.5V Enable Voltage (V) Enable Current (A) VEN=2V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 9 8 7 6 5 4 3 2 -60 -40 -20 0 20 40 60 o VEN=3V VEN=3.7V VEN=logic high VEN=logic low 80 100 120 140 0.5 -60 -40 -20 0 20 40 60 o 80 100 120 140 Junction Temperature ( C) Junction Temperature ( C) Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature 200 100 IOUT=10mA CIN=1F, COUT=2.2F 150 10 AP2213-2.5 IOUT=10mA, CIN=1F, COUT=2.2F VIN=3.5V, CBYP=100pF Output Noise ( V/ Hz) Noise Measurement Filter: DIN Noise 1 Noise (Vrms) 100 0.1 0.01 50 0.001 0 10 100 1000 10000 0.0001 10 100 1k 10k 100k 1M 10M Bypass Capacitor (pF) Frequency (Hz) Figure 10. Noise vs. Bypass Capacitor Figure 11. Output Noise vs. Frequency Nov. 2009 Rev. 1. 5 13 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2213 1 IOUT (0.5A/Div) VIN (1V/Div) 0.5 0 -0.5 10mA AP2213-2.5 5.5 4.5 3.5 2.5 AP2213-2.5 VOUT (10mV/Div) VOUT (10mV/Div) Time (200s/Div) 0 -10 -20 -30 10 0 -10 -20 Time (200s/Div) Figure 12. Load Transient (Conditions: VIN=3.5V, CBYP=100pF, VEN=2V, IOUT=10 to 500mA, CIN=1F, COUT=2.2F) Figure 13. Line Transient (Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100A, CBYP=100pF, COUT=2.2F) 3 AP2213-2.5 VEN (1V/Div) 2 1 PSRR (dB) 100 90 80 70 AP2213-2.5 VIN=3.5V, VRIPPLE=1VPP IOUT=10mA, COUT=2.2F 0 60 50 40 30 20 10 0 10 100 1k 10k 100k 1M VOUT (1V/Div) 2 1 0 -1 Time (40s/Div) Frequency (Hz) Figure 14. VEN vs. VOUT (Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA, CBYP=open, CIN=1F, COUT=2.2F) Figure 15. PSRR vs. Frequency Nov. 2009 Rev. 1. 5 14 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2213 1.4 1.2 1.4 TO-252-2(1) Package No Heatsink 1.2 SOIC-8 Package No Heatsink Power Dissipation (W) Power Dissipation (W) 1.0 0.8 0.6 0.4 0.2 0.0 25 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 o 125 150 50 75 100 o 125 150 Ambient Temperature ( C) Ambient Temperature ( C) Figure 16. Power Dissipation vs. Ambient Temperature Figure 17. Power Dissipation vs. Ambient Temperature 1000 1000 COUT=1F 100 COUT=2.2F 100 No Bypass Capacitor No Bypass Capacitor ESR () ESR () 10 10 1 Stable Area 1 Stable Area 0.1 0.1 0.01 0 50 100 150 200 250 300 350 400 450 500 0.01 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Output Current (mA) Figure 18. ESR vs. Output Current Figure 19. ESR vs. Output Current Nov. 2009 Rev. 1. 5 15 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Performance Characteristics (Continued) AP2213 1000 COUT=4.7F 100 No Bypass Capacitor ESR () 10 1 Stable Area 0.1 0.01 0 50 100 150 200 250 300 350 400 450 500 Output Current (mA) Figure 20. ESR vs. Output Current Nov. 2009 Rev. 1. 5 16 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Typical Application AP2213 VIN=3.5V VIN VIN EN CIN 1F GND AP2213-2.5 VOUT VOUT=2.5V VOUT COUT 2.2F BYP CBYP 100pF Figure 21. Typical Application of AP2213 (Note 7) Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V. Nov. 2009 Rev. 1. 5 17 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Application Information Input Capacitor A 1F minimum capacitor is recommended to be placed between VIN and GND. Output Capacitor It is required to prevent oscillation. 1F minimum is recommended when CBYP is unused. 2.2F minimum is recommended when CBYP is 100pF. The output capacitor may be increased to improve transient response. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A 100pF capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. The start-up speed of the AP2213 is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit CBYP and leave BYP open. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16, 17), using: TJ = PD*JA + TA PD=(VIN-VOUT)*IOUT+VIN*IGND Where: TJTJ(max), TJ(max) is absolute maximum ratings for the junction temperature; VIN*IGND can be ignored due to its small value. TJ(max) is 150oC, JA is 90oC/W for TO-252-2 (1) package and 160oC/W for SOIC-8 package. Example: For 2.5V version packaged in SOIC-8, IOUT=500mA, TA=50oC, VIN(Max) is: (150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V Therefore, for good performance, please make sure that input voltage is less than 3.75V without heatsink when TA=50oC. AP2213 Nov. 2009 Rev. 1. 5 18 BCD Semiconductor Manufacturing Limited Data Sheet 500mA LOW NOISE LDO REGULATOR Mechanical Dimensions TO-252-2(1) Unit: mm(inch) AP2213 1.350(0.053) 1.650(0.065) 6.350(0.250) 6.650(0.262) 5.200(0.205) 5.400(0.213) 0.430(0.017) 0.580(0.023) 2.200(0.087) 2.400(0.094) 4.300(0.169) 5.400(0.212) 0.600(0.024) 0.900(0.035) 9.500(0.374) 9.900(0.390) 0.000(0.000) 0.127(0.005) 5 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028) 4.500(0.177) 4.700(0.165) 5 5.400(0.213) 5.700(0.224) 1.400(0.055) 1.780(0.070) 0.430(0.017) 0.580(0.023) Nov. 2009 Rev. 1. 5 19 BCD Semiconductor Manufacturing Limited 2.550(0.100) 2.900(0.114) 2.300TYP 3 4 3.800REF(0.150REF) 4.800(0.189) 6.500(0.256) 8 Data Sheet 500mA LOW NOISE LDO REGULATOR Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7 1.350(0.053) 1.750(0.069) 8 AP2213 Unit: mm(inch) 0.320(0.013) 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 0 8 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1 5 R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Nov. 2009 Rev. 1. 5 20 BCD Semiconductor Manufacturing Limited 500mA LOW NOISE LDO REGULATOR Mechanical Dimensions (Continued) SOT-223 AP2213 Unit: mm(inch) 6.300(0.248) 6.700(0.264) 2.900(0.114) 3.100(0.122) 0.900(0.035) MIN 6.700(0.264) 7.300(0.287) ) 0.250(0.010 .014) 0.350(0 3.300(0.130) 3.700(0.146) 0.250(0.010) 1.750(0.069) TYP 2.300(0.091) TYP 4.500(0.177) 4.700(0.185) 0.020(0.001) 0.100(0.004) 1.520(0.060) 1.800(0.071) 0.610(0.024) 0.810(0.032) 0 10 1.500(0.059) 1.700(0.067) Nov. 2009 Rev. 1. 5 21 BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifiBCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. other rights nor the rights of others. MAIN SITE MAIN SITE - Headquarters BCD Semiconductor Manufacturing Limited - Wafer Fab BCD Semiconductor Manufacturing Limited Shanghai Design Group - IC SIM-BCD Semiconductor Manufacturing Co., Ltd. 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 900, Yi Shan Road, Shanghai 200233, China 8F, Zone B, 1491, Fax: +86-21-5450 0008 Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 USA Office BCD Semiconductor Corp. USA Office 30920 Huntwood Ave. Hayward, BCD Semiconductor Corporation CA 94544, USA 30920 Huntwood Ave. Hayward, Tel 94544, U.S.A CA : +1-510-324-2988 Fax: +1-510-324-2788 Tel : +1-510-324-2988 Fax: +1-510-324-2788 REGIONAL SALES OFFICE Shenzhen Office REGIONAL SALES OFFICE BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Limited Tel: +86-21-24162266, Fax: +86-21-24162277 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 Taiwan Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Office (Taiwan) Company Limited Semiconductor Shenzhen Office Room E, SIM-BCD Semiconductor 3rd Fuzhong Road, Futian District, Shenzhen, 4F, 298-1, Rui Guang Road,(Taiwan) Company Limited Shanghai 5F, Noble Center, No.1006,Manufacturing Co., Ltd. Shenzhen Office BCD Semiconductor Nei-Hu District, Taipei, 518026, China Taiwan 298-1, Rui Guang Road, Nei-Hu District, Taipei, Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, Tel: +86-755-8826 Center, Tel: Taiwan Room E, 5F, Noble 7951 No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China +886-2-2656 2808 Fax:+86-755-8826 7951 +86-755-8826 7865 Fax: +886-2-2656 28062808 Tel: Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 |
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